Coupled Spin and Valley Physics in Monolayers of and Other Group-VI Dichalcogenides D Xiao, GB Liu, W Feng, X Xu, W Yao Physical review letters 108 (19), 196802, 2012 | 5186 | 2012 |
Quantum spin Hall effect in silicene and two-dimensional germanium CC Liu, W Feng, Y Yao Physical review letters 107 (7), 076802, 2011 | 2471 | 2011 |
Quantum anomalous Hall effect in graphene from Rashba and exchange effects Z Qiao, SA Yang, W Feng, WK Tse, J Ding, Y Yao, J Wang, Q Niu Physical Review B 82 (16), 161414, 2010 | 717 | 2010 |
Half-Heusler compounds as a new class of three-dimensional topological insulators D Xiao, Y Yao, W Feng, J Wen, W Zhu, XQ Chen, GM Stocks, Z Zhang Physical review letters 105 (9), 096404, 2010 | 404 | 2010 |
Large anomalous Hall effect in a half-Heusler antiferromagnet T Suzuki, R Chisnell, A Devarakonda, YT Liu, W Feng, D Xiao, JW Lynn, ... Nature Physics 12 (12), 1119-1123, 2016 | 306 | 2016 |
Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study W Feng, Y Yao, W Zhu, J Zhou, W Yao, D Xiao Physical Review B 86 (16), 165108, 2012 | 290 | 2012 |
Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study J Ding, Z Qiao, W Feng, Y Yao, Q Niu Physical Review B 84 (19), 195444, 2011 | 275 | 2011 |
Topological Aspect and Quantum Magnetoresistance of W Zhang, R Yu, W Feng, Y Yao, H Weng, X Dai, Z Fang Physical review letters 106 (15), 156808, 2011 | 230 | 2011 |
Half-Heusler topological insulators: A first-principles study with the Tran-Blaha modified Becke-Johnson density functional W Feng, D Xiao, Y Zhang, Y Yao Physical Review B 82 (23), 235121, 2010 | 218 | 2010 |
Three-Dimensional Topological Insulators in and Chalcopyrite Semiconductors W Feng, D Xiao, J Ding, Y Yao Physical review letters 106 (1), 016402, 2011 | 181 | 2011 |
Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4 JJ Zhou, W Feng, CC Liu, S Guan, Y Yao Nano letters 14 (8), 4767-4771, 2014 | 179 | 2014 |
Valley-dependent properties of monolayer , and S Li, W Wu, X Feng, S Guan, W Feng, Y Yao, SA Yang Physical Review B 102 (23), 235435, 2020 | 154 | 2020 |
Computational characterization of monolayer C3N: A two-dimensional nitrogen-graphene crystal X Zhou, W Feng, S Guan, B Fu, W Su, Y Yao Journal of Materials Research 32 (15), 2993-3001, 2017 | 128 | 2017 |
Large magneto-optical Kerr effect in noncollinear antiferromagnets W Feng, GY Guo, J Zhou, Y Yao, Q Niu Physical Review B 92 (14), 144426, 2015 | 122 | 2015 |
Memristive crossbar arrays for storage and computing applications H Li, S Wang, X Zhang, W Wang, R Yang, Z Sun, W Feng, P Lin, Z Wang, ... Advanced Intelligent Systems 3 (9), 2100017, 2021 | 115 | 2021 |
Quantum spin Hall and metallic states in an organic material B Zhao, J Zhang, W Feng, Y Yao, Z Yang Physical Review B 90 (20), 201403, 2014 | 82 | 2014 |
Spin-order dependent anomalous Hall effect and magneto-optical effect in the noncollinear antiferromagnets with , Zn, Ag, or Ni X Zhou, JP Hanke, W Feng, F Li, GY Guo, Y Yao, S Blügel, Y Mokrousov Physical Review B 99 (10), 104428, 2019 | 80 | 2019 |
Effect of doping and strain modulations on electron transport in monolayer Y Ge, W Wan, W Feng, D Xiao, Y Yao Physical Review B 90 (3), 035414, 2014 | 78 | 2014 |
Topological magneto-optical effects and their quantization in noncoplanar antiferromagnets W Feng, JP Hanke, X Zhou, GY Guo, S Blügel, Y Mokrousov, Y Yao Nature Communications 11 (1), 118, 2020 | 75 | 2020 |
Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors X Zhou, RW Zhang, Z Zhang, W Feng, Y Mokrousov, Y Yao npj Computational Materials 7 (1), 160, 2021 | 63 | 2021 |