| High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu, WP Beyermann Applied Physics Letters 87 (15), 152101-152101-3, 2005 | 410 | 2005 |
| Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu Applied Physics Letters 87 (25), 252102-252102-3, 2005 | 252 | 2005 |
| p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, JL Liu, WP Beyermann Applied physics letters 88 (5), 052106-052106-3, 2006 | 185 | 2006 |
| Sb-doped p-ZnO∕ Ga-doped n-ZnO homojunction ultraviolet light emitting diodes S Chu, JH Lim, LJ Mandalapu, Z Yang, L Li, JL Liu Applied Physics Letters 92 (15), 2008 | 176 | 2008 |
| p-type behavior from Sb-doped ZnO heterojunction photodiodes LJ Mandalapu, FX Xiu, Z Yang, DT Zhao, JL Liu Applied physics letters 88 (11), 112108-112108-3, 2006 | 166 | 2006 |
| Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection LJ Mandalapu, Z Yang, FX Xiu, DT Zhao, JL Liu Applied Physics Letters 88 (9), 092103-092103-3, 2006 | 165 | 2006 |
| Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes LJ Mandalapu, Z Yang, S Chu, JL Liu Applied Physics Letters 92 (12), 122101-122101-3, 2008 | 133 | 2008 |
| Donor and acceptor competitions in phosphorus-doped ZnO FX Xiu, Z Yang, LJ Mandalapu, JL Liu Applied Physics Letters 88 (15), 2006 | 121 | 2006 |
| Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy LJ Mandalapu, FX Xiu, Z Yang, JL Liu Solid-state electronics 51 (7), 1014-1017, 2007 | 96 | 2007 |
| Bi-induced acceptor states in ZnO by molecular-beam epitaxy FX Xiu, LJ Mandalapu, Z Yang, JL Liu, GF Liu, JA Yarmoff Applied Physics Letters 89 (5), 2006 | 46 | 2006 |
| Al/Ti contacts to Sb-doped p-type ZnO LJ Mandalapu, FX Xiu, Z Yang, JL Liu Journal of applied physics 102 (2), 023716-023716-5, 2007 | 44 | 2007 |
| Influence of electron injection on the photoresponse of ZnO homojunction diodes O Lopatiuk-Tirpak, L Chernyak, LJ Mandalapu, Z Yang, JL Liu, ... Applied physics letters 89 (14), 2006 | 40 | 2006 |
| Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO LJ Mandalapu, Z Yang, JL Liu Applied physics letters 90 (25), 252103-252103-3, 2007 | 35 | 2007 |
| Influence of electron injection on the temporal response of ZnO homojunction photodiodes O Lopatiuk-Tirpak, G Nootz, E Flitsiyan, L Chernyak, LJ Mandalapu, ... Applied Physics Letters 91 (4), 2007 | 10 | 2007 |
| P-type ZnO by Sb doping for PN-junction photodetectors JL Liu, FX Xiu, LJ Mandalapu, Z Yang Zinc Oxide Materials and Devices 6122, 66-72, 2006 | 8 | 2006 |
| UV photoconductors based on Ga-doped ZnO films LJ Mandalapu, F Xiu, Z Yang, J Liu MRS Online Proceedings Library (OPL) 891, 0891-EE08-07, 2005 | 7 | 2005 |
| Characteristics of a phosphorus-doped p-type ZnO film by MBE FX Xiu, Z Yang, JL Liu MRS Online Proceedings Library 892, 412-417, 2005 | 2 | 2005 |
| Sb-doped p-type ZnO and its application on light emitting devices S Chu, LJ Leela, Z Yang, JH Lim, L Li, J Liu APS March Meeting Abstracts, J35. 010, 2008 | | 2008 |
| Study of the carrier concentration dependent photoluminescence of Ga-doped ZnO thin films grown by molecular-beam epitaxy Z Yang, L Mandalapu, J Liu APS March Meeting Abstracts, L19. 005, 2008 | | 2008 |
| Fabrication and characterization of zinc oxide based photodetectors and light-emitting diodes LM Jayaramulu Dissertation Abstracts International, 2008 | | 2008 |
