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Michael Alles
Michael Alles
Bestätigte E-Mail-Adresse bei vanderbilt.edu
Titel
Zitiert von
Zitiert von
Jahr
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
4862006
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1992005
A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit
JS Kauppila, AL Sternberg, ML Alles, AM Francis, J Holmes, OA Amusan, ...
IEEE Transactions on nuclear Science 56 (6), 3152-3157, 2009
1982009
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
1522013
HBD layout isolation techniques for multiple node charge collection mitigation
JD Black, AL Sternberg, ML Alles, AF Witulski, BL Bhuva, LW Massengill, ...
IEEE transactions on nuclear science 52 (6), 2536-2541, 2005
1332005
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ...
IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007
1322007
Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology
BD Olson, OA Amusan, S Dasgupta, LW Massengill, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (4), 894-897, 2007
1212007
Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies
IS Esqueda, HJ Barnaby, ML Alles
IEEE transactions on nuclear science 52 (6), 2259-2264, 2005
1212005
Technology scaling and soft error reliability
LW Massengill, BL Bhuva, WT Holman, ML Alles, TD Loveless
2012 IEEE International Reliability Physics Symposium (IRPS), 3C. 1.1-3C. 1.7, 2012
1072012
Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes
DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ...
IEEE Transactions on Nuclear Science 67 (1), 22-28, 2019
1022019
Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing
OA Amusan, LW Massengill, MP Baze, BL Bhuva, AF Witulski, ...
IEEE Transactions on Nuclear Science 54 (6), 2584-2589, 2007
1002007
Single-event charge enhancement in SOI devices
LW Massengill, EV Kerns, SE Kerns, ML Alles
IEEE Electron Device Letters 11 (2), 98-99, 1990
991990
Model for CMOS/SOI single-event vulnerability
SE Kerns, LW Massengill, DV Kerns, ML Alles, TW Houston, H Lu, LR Hite
IEEE Transactions on Nuclear Science 36 (6), 2305-2310, 1989
821989
Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance
MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ...
IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016
812016
Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs
GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014
812014
The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs
MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 57 (6), 3169-3175, 2010
792010
Implantation process using sub-stoichiometric, oxygen doses at different energies
RP Dolan, BF Cordts III, MJ Anc, ML Alles
US Patent 6,417,078, 2002
762002
Geometry dependence of total-dose effects in bulk FinFETs
I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
752014
Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices
EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
752011
A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes
P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ...
IEEE Transactions on nuclear science 63 (1), 266-272, 2016
742016
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