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Mvs Chandrashekhar
Mvs Chandrashekhar
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Title
Cited by
Cited by
Year
Measurement of ultrafast carrier dynamics in epitaxial graphene
JM Dawlaty, S Shivaraman, M Chandrashekhar, F Rana, MG Spencer
Applied Physics Letters 92 (4), 2008
9562008
Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene
PA George, J Strait, J Dawlaty, S Shivaraman, M Chandrashekhar, ...
Nano letters 8 (12), 4248-4251, 2008
8272008
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible
JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ...
Applied Physics Letters 93 (13), 2008
6592008
Ultrafast relaxation dynamics of hot optical phonons in graphene
H Wang, JH Strait, PA George, S Shivaraman, VB Shields, ...
Applied Physics Letters 96 (8), 2010
3712010
Free-standing epitaxial graphene
S Shivaraman, RA Barton, X Yu, J Alden, L Herman, ...
Nano letters 9 (9), 3100-3105, 2009
2952009
Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene
F Rana, PA George, JH Strait, J Dawlaty, S Shivaraman, ...
Physical Review B—Condensed Matter and Materials Physics 79 (11), 115447, 2009
2862009
Demonstration of a 4H SiC betavoltaic cell
MVS Chandrashekhar, CI Thomas, H Li, MG Spencer, A Lal
Applied Physics Letters 88 (3), 2006
2352006
Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity
NBS Ekaterina A. Dolgopolova, Amy J. Brandt, Otega A. Ejegbavwo, Audrey S ...
Journal of the American Chemical Society 139 (14), 5201-5209, 2017
2242017
Thickness estimation of epitaxial graphene on SiC using attenuation of substrate Raman intensity
S Shivaraman, MVS Chandrashekhar, JJ Boeckl, MG Spencer
Journal of electronic materials 38, 725-730, 2009
1762009
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
C Coletti, S Forti, A Principi, KV Emtsev, AA Zakharov, KM Daniels, ...
Physical Review B—Condensed Matter and Materials Physics 88 (15), 155439, 2013
1242013
Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ...
Nanotechnology 17 (5), 1264, 2006
902006
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
S Muhtadi, SM Hwang, A Coleman, F Asif, G Simin, MVS Chandrashekhar, ...
IEEE Electron Device Letters 38 (7), 914-917, 2017
752017
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
I Chowdhury, MVS Chandrasekhar, PB Klein, JD Caldwell, T Sudarshan
Journal of Crystal Growth 316 (1), 60-66, 2011
682011
Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: on the growth of multilayer films
BK Daas, SU Omar, S Shetu, KM Daniels, S Ma, TS Sudarshan, ...
Crystal growth & design 12 (7), 3379-3387, 2012
562012
Betavoltaic cell
MVS Chandrashekhar, CI Thomas, MG Spencer
US Patent 7,663,288, 2010
562010
Interface trap-induced nonideality in as-deposited Ni/4H-SiC Schottky barrier diode
SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar
IEEE Transactions on Electron Devices 62 (2), 615-621, 2014
472014
High power density betavoltaic battery
M Spencer, MVS Chandrashekhar
US Patent 8,487,392, 2013
462013
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes
R Floyd, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ...
Applied Physics Express 14 (8), 084002, 2021
452021
Emission of terahertz radiation from SiC
JH Strait, PA George, J Dawlaty, S Shivaraman, M Chandrashekhar, ...
Applied Physics Letters 95 (5), 2009
402009
Synthesis and properties of high-quality InN nanowires and nanonetworks
Z Cai, S Garzon, MVS Chandrashekhar, RA Webb, G Koley
Journal of electronic materials 37, 585-592, 2008
392008
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