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Mark Holtz, Ph.D.
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High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia
SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
2971999
Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law
N Stojanovic, DHS Maithripala, JM Berg, M Holtz
Physical Review B 82 (7), 075418, 2010
2782010
Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates
Y Zhao, J Hwan Lee, Y Zhu, M Nazari, C Chen, H Wang, A Bernussi, ...
Journal of Applied Physics 111 (5), 2012
2352012
Structural and optical properties of carbondoped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport
T Prokofyeva, M Seon, J Vanbuskirk, M Holtz
Phys. Rev. B 63, 125313, 2001
1942001
Enhanced signal-to-background ratios in voltammetric measurements made at diamond thin-film electrochemical interfaces
JW Strojek, MC Granger, GM Swain, T Dallas, MW Holtz
Analytical chemistry 68 (13), 2031-2037, 1996
1761996
Raman spectroscopy of carbon materials
JR Dennison, M Holtz, G Swain
Spectroscopy 11 (8), 1996
1581996
Tunable dual-band terahertz metamaterial bandpass filters
Y Zhu, S Vegesna, Y Zhao, V Kuryatkov, M Holtz, Z Fan, M Saed, ...
Optics letters 38 (14), 2382-2384, 2013
1352013
Visible and ultraviolet Raman scattering studies of alloys
M Holtz, WM Duncan, S Zollner, R Liu
Journal of Applied Physics 88 (5), 2523-2528, 2000
1322000
Raman studies of nitrogen incorporation in
T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin
Applied physics letters 73 (10), 1409-1411, 1998
1321998
Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon
A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ...
IEEE Sensors Journal 3 (6), 788-795, 2003
1312003
Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates
I Ahmad, M Holtz, NN Faleev, H Temkin
Journal of applied physics 95 (4), 1692-1697, 2004
1292004
Influence of defects on structural and electrical properties of VO2 thin films
C Chen, Y Zhao, X Pan, V Kuryatkov, A Bernussi, M Holtz, Z Fan
Journal of Applied Physics 110 (2), 2011
1142011
Effect of substrate orientation on terahertz optical transmission through VO2 thin films and application to functional antireflection coatings
Y Zhu, Y Zhao, M Holtz, Z Fan, AA Bernussi
JOSA B 29 (9), 2373-2378, 2012
1132012
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva, M Seon, J Vanbuskirk, M Holtz
Phys. Rev. B 63, 125313, 2001
1132001
Si-doped AlxGa1− xN (0.56⩽⩽ 1) layers grown by molecular beam epitaxy with ammonia
B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ...
Applied physics letters 87 (13), 2005
1112005
A two-stage discrete peristaltic micropump
JM Berg, R Anderson, M Anaya, B Lahlouh, M Holtz, T Dallas
Sensors and Actuators A: Physical 104 (1), 6-10, 2003
1112003
AlN/AlGaInN superlattice light-emitting diodes at 280 nm
G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin
Journal of applied physics 93 (3), 1363-1366, 2003
1092003
AlGaInN-based ultraviolet light-emitting diodes grown on Si (111)
G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin
Applied Physics Letters 80 (20), 3682-3684, 2002
1072002
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
1011999
VO2 multidomain heteroepitaxial growth and terahertz transmission modulation
C Chen, Y Zhu, Y Zhao, JH Lee, H Wang, A Bernussi, M Holtz, Z Fan
Applied Physics Letters 97 (21), 2010
1002010
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