| Unexpected giant-gap quantum spin Hall insulator in chemically decorated plumbene monolayer H Zhao, C Zhang, W Ji, R Zhang, S Li, S Yan, B Zhang, P Li, P Wang Scientific reports 6 (1), 20152, 2016 | 188 | 2016 |
| Ethynyl-functionalized stanene film: a promising candidate as large-gap quantum spin Hall insulator RW Zhang, CW Zhang, WX Ji, SS Li, SJ Hu, SS Yan, P Li, PJ Wang, F Li New Journal of Physics 17 (8), 083036, 2015 | 178 | 2015 |
| Encyclopedia of emergent particles in three-dimensional crystals ZM Yu, Z Zhang, GB Liu, W Wu, XP Li, RW Zhang, SA Yang, Y Yao Science Bulletin 67 (4), 375-380, 2022 | 158 | 2022 |
| Tunable quantum spin Hall effect via strain in two-dimensional arsenene monolayer Y Wang, C Zhang, W Ji, R Zhang, P Li, P Wang, M Ren, X Chen, M Yuan Journal of Physics D: Applied Physics 49 (5), 055305, 2016 | 85 | 2016 |
| New family of room temperature quantum spin Hall insulators in two-dimensional germanene films R Zhang, W Ji, C Zhang, S Li, P Li, P Wang Journal of Materials Chemistry C 4 (10), 2088-2094, 2016 | 80 | 2016 |
| Discovery of Weyl nodal lines in a single-layer ferromagnet B Feng, RW Zhang, Y Feng, B Fu, S Wu, K Miyamoto, S He, L Chen, K Wu, ... Physical Review Letters 123 (11), 116401(6), 2019 | 76 | 2019 |
| Silicon-based chalcogenide: Unexpected quantum spin Hall insulator with sizable band gap R Zhang, C Zhang, W Ji, P Li, P Wang, S Li, S Yan Applied Physics Letters 109 (18), 2016 | 75 | 2016 |
| Silicane as an inert substrate of silicene: a promising candidate for FET R Zhang, C Zhang, W Ji, S Hu, S Yan, S Li, P Li, P Wang, Y Liu The Journal of Physical Chemistry C 118 (43), 25278-25283, 2014 | 70 | 2014 |
| Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides J Zhou, C Zhu, Y Zhou, J Dong, P Li, Z Zhang, Z Wang, YC Lin, J Shi, ... Nature Materials 22 (4), 450-458, 2023 | 65 | 2023 |
| Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors X Zhou, RW Zhang, Z Zhang, W Feng, Y Mokrousov, Y Yao npj Computational Materials 7 (1), 160, 2021 | 63 | 2021 |
| Room temperature quantum spin Hall insulator in ethynyl-derivative functionalized stanene films R Zhang, C Zhang, W Ji, S Li, S Yan, S Hu, P Li, P Wang, F Li Scientific reports 6 (1), 18879, 2016 | 55 | 2016 |
| Nodal line spin-gapless semimetals and high-quality candidate materials RW Zhang, Z Zhang, CC Liu, Y Yao Physical Review Letters 124 (1), 016402, 2020 | 50 | 2020 |
| Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route Jing Zhang, Luojun Du, Shun Feng, Run-Wu Zhang, Bingchen Cao, Chenji Zou, Yu ... Nature Communications 10 (4226), 2019 | 47 | 2019 |
| Functionalized thallium antimony films as excellent candidates for large-gap quantum spin hall insulator R Zhang, C Zhang, W Ji, S Li, S Yan, P Li, P Wang Scientific reports 6 (1), 21351, 2016 | 34 | 2016 |
| High-throughput screening and automated processing toward novel topological insulators Z Zhang, RW Zhang, X Li, K Koepernik, Y Yao, H Zhang The journal of physical chemistry letters 9 (21), 6224-6231, 2018 | 31 | 2018 |
| Fully spin-polarized nodal loop semimetals in alkaline metal monochalcogenide monolayers X Zhou, RW Zhang, Z Zhang, DS Ma, W Feng, Y Mokrousov, Y Yao The journal of physical chemistry letters 10 (11), 3101-3108, 2019 | 30 | 2019 |
| Crystal Thermal Transport in Altermagnetic X Zhou, W Feng, RW Zhang, L Šmejkal, J Sinova, Y Mokrousov, Y Yao Physical Review Letters 132 (5), 056701, 2024 | 29 | 2024 |
| First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator RW Zhang, CW Zhang, WX Ji, SS Yan, YG Yao Nanoscale 9 (24), 8207-8212, 2017 | 29 | 2017 |
| From node-line semimetals to large-gap quantum spin Hall states in a family of pentagonal group-IVA chalcogenide RW Zhang, CC Liu, DS Ma, Y Yao Physical Review B 97 (12), 125312, 2018 | 27 | 2018 |
| Prediction of flatness-driven quantum spin Hall effect in functionalized germanene and stanene R Zhang, W Ji, C Zhang, P Li, P Wang Physical Chemistry Chemical Physics 18 (40), 28134-28139, 2016 | 26 | 2016 |
Yugui YaoBeijing Institute of TechnologyVerified email at bit.edu.cn
