Vincenzo Della Marca
Vincenzo Della Marca
Aix-Marseille Université - Im2np
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True random number generator integration in a resistive RAM memory array using input current limitation
H Aziza, J Postel-Pellerin, H Bazzi, P Canet, M Moreau, V Della Marca, ...
IEEE Transactions on Nanotechnology 19, 214-222, 2020
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations
A Padovani, L Larcher, V Della Marca, P Pavan, H Park, G Bersuker
Journal of applied physics 110 (1), 2011
Temperature effects on metal-alumina-nitride-oxide-silicon memory operations
A Padovani, L Larcher, D Heh, G Bersuker, V Della Marca, P Pavan
Applied Physics Letters 96 (22), 2010
Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories
L Masoero, G Molas, F Brun, M Gély, JP Colonna, V Della Marca, O Cueto, ...
2011 International Electron Devices Meeting, 9.5. 1-9.5. 4, 2011
Push the flash floating gate memories toward the future low energy application
V Della Marca, G Just, A Regnier, JL Ogier, R Simola, S Niel, ...
Solid-State Electronics 79, 210-217, 2013
Investigation of Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications
C Sung, A Padovani, B Beltrando, D Lee, M Kwak, S Lim, L Larcher, ...
IEEE Journal of The Electron Devices Society 7, 404-408, 2019
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations
L Larcher, A Padovani, V della Marca, P Pavan, A Bertacchini
Proceedings of 2010 International Symposium on VLSI Technology, System and …, 2010
Comprehensive phase-change memory compact model for circuit simulation
C Pigot, M Bocquet, F Gilibert, M Reyboz, O Cueto, V Della Marca, ...
IEEE Transactions on Electron Devices 65 (10), 4282-4289, 2018
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
V Della Marca, J Postel-Pellerin, G Just, P Canet, JL Ogier
Microelectronics Reliability 54 (9-10), 2262-2265, 2014
True random number generation exploiting SET voltage variability in resistive RAM memory arrays
J Postel-Pellerin, H Bazzi, H Aziza, P Canet, M Moreau, V Della Marca, ...
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-5, 2019
Role of holes and electrons during erase of TANOS memories: evidences for dipole formation and its impact on reliability
L Vandelli, A Padovani, L Larcher, A Arreghini, M Jurczak, J Van Houdt, ...
2010 IEEE International Reliability Physics Symposium, 731-737, 2010
Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations
M Chambonneau, S Souiki-Figuigui, P Chiquet, V Della Marca, ...
Applied Physics Letters 110 (16), 2017
Experimental study to push the Flash floating gate memories toward low energy applications
V Della Marca, A Regnier, JL Ogier, R Simola, S Niel, J Postel-Pellerin, ...
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
Energy consumption optimization in nonvolatile silicon nanocrystal memories
V Della Marca, J Amouroux, J Delalleau, L Lopez, JL Ogier, ...
CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 339-342, 2011
Real-time switching dynamics in STT-MRAM
N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, RC Sousa, ...
IEEE Journal of the Electron Devices Society 10, 490-494, 2022
Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser
P Chiquet, M Chambonneau, V Della Marca, J Postel-Pellerin, P Canet, ...
Scientific Reports 9 (1), 7392, 2019
Simulation of the programming efficiency and the energy consumption of Flash memories during endurance degradation
J Postel-Pellerin, P Chiquet, V Della Marca
2016 International Semiconductor Conference (CAS), 101-104, 2016
NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests
V Della Marca, M Chambonneau, S Souiki-Figuigui, J Postel-Pellerin, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 7B-4-1-7B-4-7, 2016
Physical understanding of program injection and consumption in ultra-scaled SiN Split-Gate memories
L Masoero, G Molas, V Della Marca, M Gély, O Cueto, JP Colonna, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
Experimental analysis on stochastic behavior of preswitching time in STT-MRAM
N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, S Nadifi, ...
Microelectronics Reliability 138, 114677, 2022
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