Recent advances in ZnO materials and devices DC Look Materials science and engineering: B 80 (1-3), 383-387, 2001 | 3734 | 2001 |
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy DC Look, DC Reynolds, CW Litton, RL Jones, DB Eason, G Cantwell Applied physics letters 81 (10), 1830-1832, 2002 | 1707 | 2002 |
Residual native shallow donor in ZnO DC Look, JW Hemsky, JR Sizelove Physical review letters 82 (12), 2552, 1999 | 1525 | 1999 |
Electrical properties of bulk ZnO DC Look, DC Reynolds, JR Sizelove, RL Jones, CW Litton, G Cantwell, ... Solid state communications 105 (6), 399-401, 1998 | 1180 | 1998 |
Time saving in measurement of NMR and EPR relaxation times DC Look, DR Locker Review of scientific instruments 41 (2), 250-251, 1970 | 1079 | 1970 |
ZnO diode fabricated by excimer-laser doping T Aoki, Y Hatanaka, DC Look Applied Physics Letters 76 (22), 3257-3258, 2000 | 1034 | 2000 |
Electrical characterization of GaAs materials and devices DC Look Wiley, 1989 | 787 | 1989 |
Valence-band ordering in ZnO DC Reynolds, DC Look, B Jogai, CW Litton, G Cantwell, WC Harsch Physical Review B 60 (4), 2340, 1999 | 751 | 1999 |
Optically pumped ultraviolet lasing from ZnO DC Reynolds, DC Look, B Jogai Solid State Communications 99 (12), 873-875, 1996 | 702 | 1996 |
P‐type doping and devices based on ZnO DC Look, B Claflin physica status solidi (b) 241 (3), 624-630, 2004 | 677 | 2004 |
Synthesis of p-type ZnO films YR Ryu, S Zhu, DC Look, JM Wrobel, HM Jeong, HW White Journal of crystal growth 216 (1-4), 330-334, 2000 | 658 | 2000 |
Evidence for Native-Defect Donors in -Type ZnO DC Look, GC Farlow, P Reunchan, S Limpijumnong, SB Zhang, ... Physical review letters 95 (22), 225502, 2005 | 633 | 2005 |
Fabrication and characterization of heterojunction light-emitting diodes on 6H-SiC substrates YI Alivov, EV Kalinina, AE Cherenkov, DC Look, BM Ataev, AK Omaev, ... Applied Physics Letters 83 (23), 4719-4721, 2003 | 598 | 2003 |
The future of ZnO light emitters DC Look, B Claflin, YI Alivov, SJ Park physica status solidi (a) 201 (10), 2203-2212, 2004 | 588 | 2004 |
Dislocation scattering in GaN DC Look, JR Sizelove Physical review letters 82 (6), 1237, 1999 | 570 | 1999 |
Evidence of the Zn Vacancy Acting as the Dominant Acceptor in -Type ZnO F Tuomisto, V Ranki, K Saarinen, DC Look Physical Review Letters 91 (20), 205502, 2003 | 566 | 2003 |
Neutral-donor–bound-exciton complexes in ZnO crystals DC Reynolds, DC Look, B Jogai, CW Litton, TC Collins, W Harsch, ... Physical Review B 57 (19), 12151, 1998 | 555 | 1998 |
Defect donor and acceptor in GaN DC Look, DC Reynolds, JW Hemsky, JR Sizelove, RL Jones, RJ Molnar Physical review letters 79 (12), 2273, 1997 | 547 | 1997 |
Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes YI Alivov, JE Van Nostrand, DC Look, MV Chukichev, BM Ataev Applied Physics Letters 83 (14), 2943-2945, 2003 | 541 | 2003 |
Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy HJ Ko, YF Chen, SK Hong, H Wenisch, T Yao, DC Look Applied Physics Letters 77 (23), 3761-3763, 2000 | 515 | 2000 |