Martin Friedl
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Template-assisted scalable nanowire networks
M Friedl, K Cerveny, P Weigele, G Tütüncüoglu, S Martí-Sánchez, ...
Nano letters 18 (4), 2666-2671, 2018
Search for Z′ resonances decaying to tt in dilepton+ jets final states in pp collisions at√ s= 7 TeV
A Adair, B Akgun, C Boulahouache, KM Ecklund, FJM Geurts, W Li, ...
Physical Review D 87 (7), 72002, 2013
Bistability of contact angle and its role in achieving quantum-thin self-assisted GaAs nanowires
W Kim, VG Dubrovskii, J Vukajlovic-Plestina, G Tütüncüoglu, ...
Nano letters 18 (1), 49-57, 2018
From twinning to pure zincblende catalyst-free InAs (Sb) nanowires
H Potts, M Friedl, F Amaduzzi, K Tang, G Tütüncüoglu, F Matteini, ...
Nano letters 16 (1), 637-643, 2016
Engineering the size distributions of ordered GaAs nanowires on silicon
J Vukajlovic-Plestina, W Kim, VG Dubrovski, G Tütüncüoğlu, ...
Nano letters 17 (7), 4101-4108, 2017
Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
J Vukajlovic-Plestina, W Kim, L Ghisalberti, G Varnavides, G Tütüncuoglu, ...
Nature Communications 10 (1), 869, 2019
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment
M Albani, L Ghisalberti, R Bergamaschini, M Friedl, M Salvalaglio, A Voigt, ...
Physical Review Materials 2 (9), 093404, 2018
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
M Zamani, G Tütüncüoglu, S Martí-Sánchez, L Francaviglia, L Güniat, ...
Nanoscale 10 (36), 17080-17091, 2018
Tuning growth direction of catalyst-free InAs (Sb) nanowires with indium droplets
H Potts, NP Morgan, G Tütüncüoglu, M Friedl, AF i Morral
Nanotechnology 28 (5), 054001, 2016
III–V integration on Si (100): Vertical nanospades
L Güniat, S Martí-Sánchez, O Garcia, M Boscardin, D Vindice, N Tappy, ...
ACS nano 13 (5), 5833-5840, 2019
Remote doping of scalable nanowire branches
M Friedl, K Cerveny, C Huang, D Dede, M Samani, MO Hill, N Morgan, ...
Nano letters 20 (5), 3577-3584, 2020
Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning
SE Steinvall, EZ Stutz, R Paul, M Zamani, NY Dzade, V Piazza, M Friedl, ...
Nanoscale Advances 3 (2), 326-332, 2021
Segregation scheme of indium in AlGaInAs nanowire shells
L Francaviglia, G Tütüncüoglu, S Martí-Sánchez, E Di Russo, SE Steinvall, ...
Physical Review Materials 3 (2), 023001, 2019
Anisotropic-strain-induced band gap engineering in nanowire-based quantum dots
L Francaviglia, A Giunto, W Kim, P Romero-Gomez, J Vukajlovic-Plestina, ...
Nano Letters 18 (4), 2393-2401, 2018
3D ordering at the liquid–solid polar interface of nanowires
M Zamani, G Imbalzano, N Tappy, DTL Alexander, S Martí‐Sánchez, ...
Advanced Materials 32 (38), 2001030, 2020
GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon
AM Raya, M Friedl, S Martí-Sánchez, VG Dubrovskii, L Francaviglia, ...
Nanoscale 12 (2), 815-824, 2020
Selective area epitaxy of GaAs: The unintuitive role of feature size and pitch
D Dede, F Glas, V Piazza, N Morgan, M Friedl, L Güniat, EN Dayi, ...
Nanotechnology 33 (48), 485604, 2022
Questioning liquid droplet stability on nanowire tips: from theory to experiment
L Ghisalberti, H Potts, M Friedl, M Zamani, L Güniat, G Tütüncüoglu, ...
Nanotechnology 30 (28), 285604, 2019
Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor
EZ Stutz, M Friedl, T Burgess, HH Tan, P Caroff, C Jagadish, ...
physica status solidi (RRL)–Rapid Research Letters 13 (7), 1900084, 2019
Facet-driven formation of axial and radial In (Ga) As clusters in GaAs nanowires
A Balgarkashi, SP Ramanandan, N Tappy, M Nahra, W Kim, L Güniat, ...
Journal of Optics 22 (8), 084002, 2020
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