Tony E. Haynes
Tony E. Haynes
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
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Cited by
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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...
Journal of Applied Physics 81 (9), 6031-6050, 1997
Size effects in the structural phase transition of VO2 nanoparticles
R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Physical Review B 65 (22), 224113, 2002
Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
A Agarwal, TE Haynes, VC Venezia, OW Holland, DJ Eaglesham
Applied Physics Letters 72 (9), 1086-1088, 1998
Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
MK Weldon, M Collot, YJ Chabal, VC Venezia, A Agarwal, TE Haynes, ...
Applied Physics Letters 73 (25), 3721-3723, 1998
Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance
M Rini, A Cavalleri, RW Schoenlein, R López, LC Feldman, RF Haglund, ...
Optics letters 30 (5), 558-560, 2005
Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix
R Lopez, LA Boatner, TE Haynes, LC Feldman, RF Haglund Jr
Journal of applied physics 92 (7), 4031-4036, 2002
Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films
Y Shigesato, DC Paine, TE Haynes
Journal of applied physics 73 (8), 3805-3811, 1993
Temperature-controlled surface plasmon resonance in VO2 nanorods
R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr
Optics letters 27 (15), 1327-1329, 2002
A study of the Au/Ni ohmic contact on
D Qiao, LS Yu, SS Lau, JY Lin, HX Jiang, TE Haynes
Journal of Applied Physics 88 (7), 4196-4200, 2000
Enhanced hysteresis in the semiconductor-to-metal phase transition of precipitates formed in by ion implantation
R Lopez, LA Boatner, TE Haynes, RF Haglund Jr, LC Feldman
Applied Physics Letters 79 (19), 3161-3163, 2001
Implant damage and transient enhanced diffusion in Si
DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate
Ion Beam Modification of Materials 106, 191-197, 1996
Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials
A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ...
Applied physics letters 71 (21), 3141-3143, 1997
Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon
TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ...
Applied physics letters 69 (10), 1376-1378, 1996
The interstitial fraction of diffusivity of common dopants in Si
HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ...
Applied physics letters 71 (26), 3862-3864, 1997
Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
TE Haynes, OW Holland
Applied physics letters 59 (4), 452-454, 1991
Electrical properties of heteroepitaxial grown tin‐doped indium oxide films
N Taga, H Odaka, Y Shigesato, I Yasui, M Kamei, TE Haynes
Journal of applied physics 80 (2), 978-984, 1996
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ...
Applied Physics Letters 74 (17), 2435-2437, 1999
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ...
Applied physics letters 74 (9), 1299-1301, 1999
Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
VC Venezia, DJ Eaglesham, TE Haynes, A Agarwal, DC Jacobson, ...
Applied physics letters 73 (20), 2980-2982, 1998
Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures
D Qiao, LS Yu, L Jia, PM Asbeck, SS Lau, TE Haynes
Applied Physics Letters 80 (6), 992-994, 2002
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