| Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi IEEE Transactions on Electron Devices 48 (12), 2842-2850, 2001 | 150 | 2001 |
| An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi IEEE Transactions on Electron Devices 50 (3), 802-808, 2003 | 139 | 2003 |
| Low field mobility of ultra-thin SOI N-and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs D Esseni, M Mastrapasqua, GK Celler, FH Baumann, C Fiegna, L Selmi, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 104 | 2000 |
| Secondary Electron flash-a high performance, low power flash technology for 0.35/spl mu/m and below JD Bude, M Mastrapasqua, MR Pinto, RW Gregor, PJ Kelley, RA Kohler, ... International Electron Devices Meeting. IEDM Technical Digest, 279-282, 1997 | 104 | 1997 |
| Observation of avalanche propagation by multiplication assisted diffusion in p‐n junctions A Lacaita, M Mastrapasqua, M Ghioni, S Vanoli Applied physics letters 57 (5), 489-491, 1990 | 75 | 1990 |
| Impact ionization and distribution functions in sub-micron nMOSFET technologies JD Bude, M Mastrapasqua IEEE Electron Device Letters 16 (10), 439-441, 1995 | 71 | 1995 |
| Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates A Pacelli, P Palestri, M Mastrapasqua IEEE Transactions on Electron Devices 49 (6), 1027-1033, 2002 | 70 | 2002 |
| Characterization of tunneling current in ultra-thin gate oxide A Ghetti, CT Liu, M Mastrapasqua, E Sangiorgi Solid-State Electronics 44 (9), 1523-1531, 2000 | 69 | 2000 |
| Light emitting logic devices based on real space transfer in complementary InGaAs/InAlAs heterostructures S Luryi, M Mastrapasqua Negative Differential Resistance and Instabilities in 2-D Semiconductors, 53-82, 1993 | 56 | 1993 |
| Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process CA King, MR Frei, M Mastrapasqua, KK Ng, YO Kim, RW Johnson, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 48 | 1999 |
| Verification of electron distributions in silicon by means of hot carrier luminescence measurements L Selmi, M Mastrapasqua, DM Boulin, JD Bude, M Pavesi, E Sangiorgi, ... IEEE Transactions on Electron Devices 45 (4), 802-808, 1998 | 48 | 1998 |
| An experimental study of low field electron mobility in double-gate, ultra-thin SOI MOSFETs D Esseni, M Mastrapasqua, C Fiegna, GK Celler, L Selmi, E Sangiorgi International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 45 | 2001 |
| Non-volatile memory element for programmable logic applications and operational methods therefor HIL Cong, JD Bude, M Mastrapasqua US Patent 6,002,610, 1999 | 41 | 1999 |
| Heterojunction bipolar transistor MR Frei, CA King, Y Ma, M Mastrapasqua, KK Ng US Patent 6,509,242, 2003 | 39 | 2003 |
| Thermal resistance in Si/sub 1-x/Ge/sub x/HBTs on bulk-Si and SOI substrates P Palestri, A Pacelli, M Mastrapasqua Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2001 | 38 | 2001 |
| Strong dependence of time resolution on detector diameter in single photon avalanche diodes A Lacaita, M Mastrapasqua Electronics Letters 26 (24), 2053-2054, 1990 | 37 | 1990 |
| Light-emitting transistor based on real-space transfer: electrical and optical properties M Mastrapasqua, S Luryi, F Capasso, AL Hutchinson, DL Sivco, AY Cho IEEE transactions on electron devices 40 (2), 250-258, 1993 | 32 | 1993 |
| Method for erasing and programming memory devices JD Bude, M Mastrapasqua US Patent 6,011,722, 2000 | 31 | 2000 |
| Control of hot carrier injection in a metal-oxide semiconductor device PL Gammel, IC Kizilyalli, MG Mastrapasqua, MA Shibib, Z Xie, S Xu US Patent 7,279,744, 2007 | 27 | 2007 |
| Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructures GL Belenky, PA Garbinski, S Luryi, M Mastrapasqua, AY Cho, RA Hamm, ... Journal of applied physics 73 (12), 8618-8627, 1993 | 25 | 1993 |
