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Thomas Tschirky
Thomas Tschirky
Scientist R&D, Evatec AG
Verified email at evatecnet.com
Title
Cited by
Cited by
Year
Nonlocal transport via edge states in InAs/GaSb coupled quantum wells
S Mueller, AN Pal, M Karalic, T Tschirky, C Charpentier, W Wegscheider, ...
Physical Review B 92 (8), 081303, 2015
702015
Edge transport in InAs and InAs/GaSb quantum wells
S Mueller, C Mittag, T Tschirky, C Charpentier, W Wegscheider, K Ensslin, ...
Physical Review B 96 (7), 075406, 2017
442017
Scattering mechanisms of highest-mobility quantum wells
T Tschirky, S Mueller, CA Lehner, S Fält, T Ihn, K Ensslin, W Wegscheider
Physical Review B 95 (11), 115304, 2017
442017
Experimental signatures of the inverted phase in InAs/GaSb coupled quantum wells
M Karalic, S Mueller, C Mittag, K Pakrouski, QS Wu, AA Soluyanov, ...
Physical Review B 94 (24), 241402, 2016
432016
Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems
CA Lehner, T Tschirky, T Ihn, W Dietsche, J Keller, S Fält, W Wegscheider
Physical Review Materials 2 (5), 054601, 2018
342018
Observation of fractional quantum Hall effect in an InAs quantum well
MK Ma, MS Hossain, KA Villegas Rosales, H Deng, T Tschirky, ...
Physical Review B 96 (24), 241301, 2017
272017
Passivation of edge states in etched InAs sidewalls
C Mittag, M Karalic, S Mueller, T Tschirky, W Wegscheider, O Nazarenko, ...
Applied Physics Letters 111 (8), 2017
232017
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
AN Pal, S Müller, T Ihn, K Ensslin, T Tschirky, C Charpentier, ...
AIP Advances 5 (7), 2015
21*2015
Lateral Junction in an Inverted Double Quantum Well
M Karalic, C Mittag, T Tschirky, W Wegscheider, K Ensslin, T Ihn
Physical review letters 118 (20), 206801, 2017
192017
Gate-tunable electronic transport in -type GaSb quantum wells
M Karalic, C Mittag, M Hug, T Tschirky, W Wegscheider, K Ensslin, T Ihn, ...
Physical Review B 99 (11), 115435, 2019
172019
Electron-hole interference in an inverted-band semiconductor bilayer
M Karalic, A Štrkalj, M Masseroni, W Chen, C Mittag, T Tschirky, ...
Physical Review X 10 (3), 031007, 2020
132020
Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells
K Shibata, M Karalic, C Mittag, T Tschirky, C Reichl, H Ito, K Hashimoto, ...
Applied Physics Letters 114 (23), 2019
92019
Phase slips and parity jumps in quantum oscillations of inverted InAs/GaSb quantum wells
M Karalic, C Mittag, S Mueller, T Tschirky, W Wegscheider, K Ensslin, ...
Physical Review B 99 (20), 201402, 2019
92019
Edgeless and purely gate-defined nanostructures in InAs quantum wells
C Mittag, M Karalic, Z Lei, T Tschirky, W Wegscheider, T Ihn, K Ensslin
Applied Physics Letters 113 (26), 2018
92018
Impact of strain on the electronic properties of InAs/GaSb quantum well systems
L Tiemann, S Mueller, QS Wu, T Tschirky, K Ensslin, W Wegscheider, ...
Physical Review B 95 (11), 115108, 2017
62017
Mapping an electron wave function by a local electron scattering probe
C Reichl, W Dietsche, T Tschirky, T Hyart, W Wegscheider
New Journal of Physics 17 (11), 113048, 2015
62015
MBE Growth of 6.1 Å Family Semiconductor Heterostructures
T Tschirky
ETH Zurich, 2018
42018
Conductive n-type gallium nitride thin films prepared by sputter deposition
P Loretz, T Tschirky, F Isa, J Patscheider, M Trottmann, A Wichser, ...
Journal of Vacuum Science & Technology A 40 (4), 2022
12022
Magnetotransport of electrically induced two-dimensional hole gases in undoped GaSb quantum wells
K Shibata, M Karalic, C Mittag, T Tschirky, C Reichl, H Ito, K Hashimoto, ...
Physical Review Research 2 (3), 033383, 2020
12020
Liquid sputter target
D Jaeger, T Tschirky, M Rechsteiner, H Felzer, H Rohrmann
US Patent 11,952,654, 2024
2024
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