Wang Kang
Cited by
Cited by
Skyrmion-based artificial synapses for neuromorphic computing
KM Song, JS Jeong, B Pan, X Zhang, J Xia, S Cha, TE Park, K Kim, ...
Nature Electronics 3 (3), 148-155, 2020
Skyrmion-electronics: An overview and outlook
W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Proceedings of the IEEE 104 (10), 2040-2061, 2016
Magnetic skyrmion-based synaptic devices
Y Huang, W Kang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28 (8), 08LT02, 2017
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
M Wang, W Cai, K Cao, J Zhou, J Wrona, S Peng, H Yang, J Wei, W Kang, ...
Nature communications 9 (1), 671, 2018
Voltage controlled magnetic skyrmion motion for racetrack memory
W Kang, Y Huang, C Zheng, W Lv, N Lei, Y Zhang, X Zhang, Y Zhou, ...
Scientific reports 6 (1), 23164, 2016
Magnetic skyrmion-based artificial neuron device
S Li, W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28 (31), 31LT01, 2017
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology
W Kang, L Zhang, JO Klein, Y Zhang, D Ravelosona, W Zhao
IEEE Transactions on Electron Devices 62 (6), 1769-1777, 2015
Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next-generation low-power and high-speed MRAM applications
W Kang, Y Ran, Y Zhang, W Lv, W Zhao
IEEE Transactions on Nanotechnology 16 (3), 387-395, 2017
Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology
W Kang, Y Zhang, Z Wang, JO Klein, C Chappert, D Ravelosona, G Wang, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (2), 1-42, 2015
A compact skyrmionic leaky–integrate–fire spiking neuron device
X Chen, W Kang, D Zhu, X Zhang, N Lei, Y Zhang, Y Zhou, W Zhao
Nanoscale 10 (13), 6139-6146, 2018
Magnetic skyrmions for unconventional computing
S Li, W Kang, X Zhang, T Nie, Y Zhou, KL Wang, W Zhao
Materials Horizons 8 (3), 854-868, 2021
In-memory processing paradigm for bitwise logic operations in STT–MRAM
W Kang, H Wang, Z Wang, Y Zhang, W Zhao
IEEE Transactions on Magnetics 53 (11), 1-4, 2017
Compact model of subvolume MTJ and its design application at nanoscale technology nodes
Y Zhang, B Yan, W Kang, Y Cheng, JO Klein, Y Zhang, Y Chen, W Zhao
IEEE Transactions on Electron Devices 62 (6), 2048-2055, 2015
A multilevel cell STT-MRAM-based computing in-memory accelerator for binary convolutional neural network
Y Pan, P Ouyang, Y Zhao, W Kang, S Yin, Y Zhang, W Zhao, S Wei
IEEE Transactions on Magnetics 54 (11), 1-5, 2018
Skyrmions in magnetic tunnel junctions
X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ...
ACS applied materials & interfaces 10 (19), 16887-16892, 2018
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory
H Zhang, W Kang, L Wang, KL Wang, W Zhao
IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017
Complementary skyrmion racetrack memory with voltage manipulation
W Kang, C Zheng, Y Huang, X Zhang, Y Zhou, W Lv, W Zhao
IEEE Electron Device Letters 37 (7), 924-927, 2016
Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy
W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ...
Materials 9 (1), 41, 2016
Yield and reliability improvement techniques for emerging nonvolatile STT-MRAM
W Kang, L Zhang, W Zhao, JO Klein, Y Zhang, D Ravelosona, C Chappert
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (1 …, 2014
A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions
W Zhao, E Deng, JO Klein, Y Cheng, D Ravelosona, Y Zhang, C Chappert
Journal of Physics D: Applied Physics 47 (40), 405003, 2014
The system can't perform the operation now. Try again later.
Articles 1–20