Skyrmion-based artificial synapses for neuromorphic computing KM Song, JS Jeong, B Pan, X Zhang, J Xia, S Cha, TE Park, K Kim, ... Nature Electronics 3 (3), 148-155, 2020 | 524 | 2020 |
Skyrmion-electronics: An overview and outlook W Kang, Y Huang, X Zhang, Y Zhou, W Zhao Proceedings of the IEEE 104 (10), 2040-2061, 2016 | 415 | 2016 |
Magnetic skyrmion-based synaptic devices Y Huang, W Kang, X Zhang, Y Zhou, W Zhao Nanotechnology 28 (8), 08LT02, 2017 | 322 | 2017 |
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance M Wang, W Cai, K Cao, J Zhou, J Wrona, S Peng, H Yang, J Wei, W Kang, ... Nature communications 9 (1), 671, 2018 | 318 | 2018 |
Voltage controlled magnetic skyrmion motion for racetrack memory W Kang, Y Huang, C Zheng, W Lv, N Lei, Y Zhang, X Zhang, Y Zhou, ... Scientific reports 6 (1), 23164, 2016 | 258 | 2016 |
Magnetic skyrmion-based artificial neuron device S Li, W Kang, Y Huang, X Zhang, Y Zhou, W Zhao Nanotechnology 28 (31), 31LT01, 2017 | 243 | 2017 |
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology W Kang, L Zhang, JO Klein, Y Zhang, D Ravelosona, W Zhao IEEE Transactions on Electron Devices 62 (6), 1769-1777, 2015 | 193 | 2015 |
Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next-generation low-power and high-speed MRAM applications W Kang, Y Ran, Y Zhang, W Lv, W Zhao IEEE Transactions on Nanotechnology 16 (3), 387-395, 2017 | 163 | 2017 |
A compact skyrmionic leaky–integrate–fire spiking neuron device X Chen, W Kang, D Zhu, X Zhang, N Lei, Y Zhang, Y Zhou, W Zhao Nanoscale 10 (13), 6139-6146, 2018 | 128 | 2018 |
Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology W Kang, Y Zhang, Z Wang, JO Klein, C Chappert, D Ravelosona, G Wang, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (2), 1-42, 2015 | 125 | 2015 |
Magnetic skyrmions for unconventional computing S Li, W Kang, X Zhang, T Nie, Y Zhou, KL Wang, W Zhao Materials Horizons 8 (3), 854-868, 2021 | 119 | 2021 |
In-memory processing paradigm for bitwise logic operations in STT–MRAM W Kang, H Wang, Z Wang, Y Zhang, W Zhao IEEE Transactions on Magnetics 53 (11), 1-4, 2017 | 117 | 2017 |
Compact model of subvolume MTJ and its design application at nanoscale technology nodes Y Zhang, B Yan, W Kang, Y Cheng, JO Klein, Y Zhang, Y Chen, W Zhao IEEE Transactions on Electron Devices 62 (6), 2048-2055, 2015 | 111 | 2015 |
A multilevel cell STT-MRAM-based computing in-memory accelerator for binary convolutional neural network Y Pan, P Ouyang, Y Zhao, W Kang, S Yin, Y Zhang, W Zhao, S Wei IEEE Transactions on Magnetics 54 (11), 1-5, 2018 | 105 | 2018 |
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory H Zhang, W Kang, L Wang, KL Wang, W Zhao IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017 | 91 | 2017 |
Skyrmions in magnetic tunnel junctions X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ... ACS applied materials & interfaces 10 (19), 16887-16892, 2018 | 90 | 2018 |
Complementary skyrmion racetrack memory with voltage manipulation W Kang, C Zheng, Y Huang, X Zhang, Y Zhou, W Lv, W Zhao IEEE Electron Device Letters 37 (7), 924-927, 2016 | 90 | 2016 |
Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature S Li, A Du, Y Wang, X Wang, X Zhang, H Cheng, W Cai, S Lu, K Cao, ... Science Bulletin 67 (7), 691-699, 2022 | 82 | 2022 |
Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ... Materials 9 (1), 41, 2016 | 82 | 2016 |
Yield and reliability improvement techniques for emerging nonvolatile STT-MRAM W Kang, L Zhang, W Zhao, JO Klein, Y Zhang, D Ravelosona, C Chappert IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (1 …, 2014 | 82 | 2014 |