Michael Shur
Michael Shur
Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic
Verified email at - Homepage
Cited by
Cited by
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe
ME Levinshtein, SL Rumyantsev, MS Shur
John Wiley & Sons, 2001
Handbook series on semiconductor parameters
M Levinshtein
World Scientific, 1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current
M Dyakonov, M Shur
Physical review letters 71 (15), 2465, 1993
Physics of semiconductor devices
M Shur, J Singh
Physics Today 43 (10), 98-99, 1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
M Dyakonov, M Shur
IEEE transactions on electron devices 43 (3), 380-387, 1996
GaAs devices and circuits
MS Shur
Springer Science & Business Media, 2013
Introduction to solid-state lighting
A Žukauskas, M Shur, R Gaska
(No Title), 2002
Threshold switching in chalcogenide‐glass thin films
D Adler, MS Shur, M Silver, SR Ovshinsky
Journal of Applied Physics 51 (6), 3289-3309, 1980
Transient electron transport in wurtzite GaN, InN, and AlN
BE Foutz, SK O’Leary, MS Shur, LF Eastman
Journal of applied physics 85 (11), 7727-7734, 1999
Sensitive skin
V Lumelsky, MS Shur, S Wagner, M Ding
World Scientific, 2000
Solid-state lighting: toward superior illumination
MS Shur, R Zukauskas
Proceedings of the IEEE 93 (10), 1691-1703, 2005
Physics of amorphous silicon based alloy field‐effect transistors
M Shur, M Hack
Journal of Applied Physics 55 (10), 3831-3842, 1984
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
An experimental study of contact effects in organic thin film transistors
DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur
Journal of Applied Physics 100 (2), 2006
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur
Applied Physics Letters 65 (9), 1121-1123, 1994
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%
M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ...
Applied Physics Express 5 (8), 082101, 2012
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid
MI Dyakonov, MS Shur
IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996
Nonresonant detection of terahertz radiation in field effect transistors
W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ...
Journal of Applied Physics 91 (11), 9346-9353, 2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur
IEEE Electron Device Letters 21 (2), 63-65, 2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
UV Bhapkar, MS Shur
Journal of Applied Physics 82 (4), 1649-1655, 1997
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