A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 13575, 2016 | 667 | 2016 |
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 151 | 2018 |
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 6, 2018 | 113 | 2018 |
Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012 | 88 | 2012 |
Single layer MoS2 nanoribbon field effect transistor D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh Applied Physics Letters 114 (1), 2019 | 56 | 2019 |
SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016 | 52 | 2016 |
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ... Applied Physics Letters 109 (19), 2016 | 42 | 2016 |
Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry A Crippa, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, AO Orlov, ... Nano letters 17 (2), 1001-1006, 2017 | 35 | 2017 |
Si CMOS platform for quantum information processing L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 35 | 2016 |
Toward valley‐coupled spin qubits KEJ Goh, F Bussolotti, CS Lau, D Kotekar‐Patil, ZE Ooi, JY Chee Advanced Quantum Technologies 3 (6), 1900123, 2020 | 31 | 2020 |
Pauli spin blockade in CMOS double quantum dot devices D Kotekar-Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, ... Phys. Status Solidi B 254, No. 3, 1600581 (2017), 2017 | 22 | 2017 |
MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor N Sharma, S Kumar, A Gupta, SB Dolmanan, DSK Patil, ST Tan, ... Sensors and Actuators A: Physical 342, 113647, 2022 | 21 | 2022 |
Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons D Kotekar-Patil, J Deng, SL Wong, KEJ Goh ACS Applied Electronic Materials 1 (11), 2202-2207, 2019 | 21 | 2019 |
Quasiballistic quantum transport through Ge/Si core/shell nanowires D Kotekar-Patil, BM Nguyen, J Yoo, SA Dayeh, SM Frolov Nanotechnology 28 (38), 385204, 2017 | 19 | 2017 |
Mass production of silicon MOS-SETs: Can we live with nano-devices’ variability? X Jehl, B Roche, M Sanquer, B Voisin, R Wacquez, V Deshpande, ... Procedia Computer Science 7, 266-268, 2011 | 10 | 2011 |
Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface AS Razeen, D Kotekar-Patil, EX Tang, G Yuan, J Ong, K Radhakrishnan, ... Materials Science in Semiconductor Processing 173, 108115, 2024 | 6 | 2024 |
Ultrasensitive Real-Time Detection of Pb2+ Ions Using g-C3N4 Nanosheets N Sharma, AK Sakthivel, S Alwarrapan, A Gupta, AS Razeen, DSK Patil, ... IEEE Sensors Journal 23 (10), 10308-10315, 2023 | 5 | 2023 |
Excited state spectroscopy and spin splitting in single layer MoS 2 quantum dots P Kumar, H Kim, S Tripathy, K Watanabe, T Taniguchi, KS Novoselov, ... Nanoscale 15 (45), 18203-18211, 2023 | 5 | 2023 |
Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning AS Razeen, D Kotekar‐Patil, M Jiang, EX Tang, G Yuan, J Ong, VC Wyen, ... Advanced Materials Interfaces 11 (9), 2300726, 2024 | 4 | 2024 |
SOI platform for spin qubits S De Franceschi, R Maurand, A Corna, D Kotekar-Patil, X Jehl, ... 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 4 | 2016 |