Ashok Raman
Ashok Raman
Principal Engineer, CFD Research Corporation
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides
M Turowski, A Raman, RD Schrimpf
IEEE transactions on nuclear science 51 (6), 3166-3171, 2004
Simulation of nonequilibrium thermal effects in power LDMOS transistors
A Raman, DG Walker, TS Fisher
Solid-State Electronics 47 (8), 1265-1273, 2003
Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices
AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ...
IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017
Fast, automated thermal simulation of three-dimensional integrated circuits
P Wilkerson, A Raman, M Turowski
The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2004
An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs
AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ...
IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007
Mixed-mode simulation and analysis of digital single event transients in fast CMOS ICs
M Turowski, A Raman, G Jablonski
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES'07. 14th …, 2007
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ...
IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009
Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits
L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ...
IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009
Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices
B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ...
IEEE transactions on nuclear science 53 (6), 3203-3209, 2006
Long wavelength infrared imaging under ambient thermal radiation via an all-silicon metalens
L Huang, Z Coppens, K Hallman, Z Han, KF Böhringer, N Akozbek, ...
Optical Materials Express 11 (9), 2907-2914, 2021
Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs
M Turowski, JA Pellish, KA Moen, A Raman, JD Cressler, RA Reed, G Niu
IEEE Transactions on Nuclear Science 57 (6), 3342-3348, 2010
Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes
RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, RA Reed, ...
IEEE Transactions on Nuclear Science 67 (1), 135-139, 2019
The impact of technology scaling on the single-event transient response of SiGe HBTs
NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ...
IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016
An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS
NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ...
IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013
Accurate modeling of single-event transients in a SiGe voltage reference circuit
KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ...
IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011
Simulating the radiation response of GaAs solar cells using a defect-based TCAD model
M Turowski, T Bald, A Raman, A Fedoseyev, JH Warner, CD Cress, ...
IEEE Transactions on Nuclear Science 60 (4), 2477-2485, 2013
Digital single event transient pulse generation and propagation in fast bulk CMOS ICs
M Turowski, D Mavis, A Raman, P Eaton
2006 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2006
Addressing challenges in device-circuit modeling for extreme environments of space
A Raman, M Turowski, A Fedoseyev, JD Cressler
Semiconductor Device Research Symposium, 2007 International, 2007
Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments
M Turowski, A Raman, A Fedoseyev
2009 European Conference on Radiation and Its Effects on Components and …, 2009
Single event upset modeling with nuclear reactions in nanoscale electronics
M Turowski, A Fedoseyev, A Raman, K Warren
2008 15th International Conference on Mixed Design of Integrated Circuits …, 2008
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