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Ashok Raman
Ashok Raman
Principal Engineer, CFD Research Corporation
Bestätigte E-Mail-Adresse bei cfdrc.com
Titel
Zitiert von
Zitiert von
Jahr
Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides
M Turowski, A Raman, RD Schrimpf
IEEE transactions on nuclear science 51 (6), 3166-3171, 2004
1822004
Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices
AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ...
IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017
982017
Simulation of nonequilibrium thermal effects in power LDMOS transistors
A Raman, DG Walker, TS Fisher
Solid-State Electronics 47 (8), 1265-1273, 2003
872003
Fast, automated thermal simulation of three-dimensional integrated circuits
P Wilkerson, A Raman, M Turowski
The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2004
782004
An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs
AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ...
IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007
712007
Mixed-mode simulation and analysis of digital single event transients in fast CMOS ICs
M Turowski, A Raman, G Jablonski
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES'07. 14th …, 2007
632007
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ...
IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009
522009
Long wavelength infrared imaging under ambient thermal radiation via an all-silicon metalens
L Huang, Z Coppens, K Hallman, Z Han, KF Böhringer, N Akozbek, ...
Optical Materials Express 11 (9), 2907-2914, 2021
442021
Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits
L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ...
IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009
432009
Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes
RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, RA Reed, ...
IEEE Transactions on Nuclear Science 67 (1), 135-139, 2019
362019
Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices
B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ...
IEEE transactions on nuclear science 53 (6), 3203-3209, 2006
352006
The impact of technology scaling on the single-event transient response of SiGe HBTs
NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ...
IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016
292016
Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs
M Turowski, JA Pellish, KA Moen, A Raman, JD Cressler, RA Reed, G Niu
IEEE Transactions on Nuclear Science 57 (6), 3342-3348, 2010
292010
An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS
NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ...
IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013
262013
Accurate modeling of single-event transients in a SiGe voltage reference circuit
KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ...
IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011
252011
Simulating the radiation response of GaAs solar cells using a defect-based TCAD model
M Turowski, T Bald, A Raman, A Fedoseyev, JH Warner, CD Cress, ...
IEEE Transactions on Nuclear Science 60 (4), 2477-2485, 2013
242013
Digital single event transient pulse generation and propagation in fast bulk CMOS ICs
M Turowski, D Mavis, A Raman, P Eaton
2006 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2006
182006
Physics-based modeling of nonplanar nanodevices (FinFETs) and their response to radiation
M Turowski, A Raman, W Xiong
Proceedings of the 18th International Conference Mixed Design of Integrated …, 2011
162011
Addressing challenges in device-circuit modeling for extreme environments of space
A Raman, M Turowski, A Fedoseyev, JD Cressler
Semiconductor Device Research Symposium, 2007 International, 2007
162007
Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments
M Turowski, A Raman, A Fedoseyev
2009 European Conference on Radiation and Its Effects on Components and …, 2009
152009
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